Power Electronics & Converters
The Power Electronics and Converters department develops innovative power conversion solutions for HVDC and MVDC applications. In HVDC we focus on solutions for electricity transmission networks covering AC/DC and DC/DC converters, large buffer storage systems, and power flow controllers. In MVDC we study and develop technologies for distribution networks, with a focus on protection, DC/DC converters, and energy storage systems.
The department conducts research on topologies and controls for power converters and their associated technologies, such as medium frequency transformers, silicon carbide (SiC) components and switching cells. Other research topics include condition and health monitoring, as well as digital twin modelling applied to power converters.
Advanced testing facilities enable us to perform full characterisation tests on power components up to many kVolts and kAmps, as well as back-to-back converter testing combined with a 100 kW deionised water cooling heat exchanger.
Our research includes:
Recent publications
Upgraded Control Strategies to Safeguard Resiliency in Hybrid AC-DC Networks: A Focused Overview of the State of the Art
An overview of advanced control strategies that improve stability and resilience in hybrid AC/DC networks with HVDC and multiterminal DC systems.
Al‐Acceptor Incomplete Ionization Effects on Static and Reverse Recovery Characteristics of 4H‐SiC PiN Power Diodes
This study investigates Al Acceptor Ionization in 4H-SiC PiN power diodes using calibrated TCAD simulations. The results show how Al Acceptor Ionization influences forward conduction, reverse recovery performance and temperature-dependent electrical characteristics.
Performance-limiting electron and hole traps in 4H-SiC PiN power diodes determined by combined DLTFS and TCAD studies
This paper investigates SiC PiN Power Diodes using DLTFS and TCAD simulations to identify performance-limiting electron and hole traps. The results highlight the impact of defect levels on conduction current, carrier trapping and diode performance.
