Publications2023-06-13T16:27:50+02:00

Our scientific publications

1505, 2019

New challenges for High voltage transmission

May 15th, 2019|High Voltage Substation Equipment, Publications|

In able to fully integrate renewable energies and to stop to use fossil energy and nuclear power, there is a need to evolve the current electric grid in a new one called the supergrid. This new grid will be based on a mix of High Voltage AlternativeCurent (HVAC) and High voltage Direct Current (HVDC) junctions highly meshed with Gas Insulation Substation (GIS) as nodes. While HVAC GIS technologies are well mastered, HVDC ones are still at the beginning. One weakness of the equipment being dielectric insulators, industries may have to conceive new dielectric formulations or improved ones. This paper presents a list of properties and values to target for future dielectrics formulation. At the end, it highlights as well, the importance of health and environnement and how their consideration have to be at the same level of attention than the final properties of the dielectrics.

2404, 2019

A New Energy Management Control of Modular Multilevel Converters for Coping with Voltage Stress on Sub-Modules

April 24th, 2019|High Voltage Substation Equipment, Publications|

This paper investigates the impact of the operating condition on the SM voltage ripples. In particular, it is revealed that under the classical control scheme where the Modular Multilevel Converter internal energy varies naturally with the DC grid voltage, the traditional sizing approach based on the analytical expression of instantaneous SM voltage may fail to respect the SM voltage constraint. To tackle this problem, this paper presents a solution by incorporating the advantages of the explicit energy management and the developed analytical expressions of the SM voltage ripple, which achieves a better utilization of the converter asset.

1603, 2019

Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

March 16th, 2019|Power Electronics & Converters, Publications|

Fail-to-short packages, which can still carry current after the failure of their semiconductor devices, are required for HVDC applications. However, all existing solutions are dedicated to silicon components. Here, a fail-to-short package is proposed for SiC devices. Its manufacturing process is described. 4 modules are built and submitted to intense short circuit currents (up to 2000 A). It is found that they offer a stable short-circuit failure mode, providing that the modules are mechanically clamped to prevent separation during the surge current test.

702, 2019

FMEA of a non-selective fault-clearing strategy for HVDC grids

February 7th, 2019|Publications, Supergrid Architecture & Systems|

The Failure Mode Effect Analysis (FMEA) is a technique used to investigate failures in a process or component and to identify the resultant effects of these failures on system operations. In this paper it is explained how the FMEA can be used to define and assess the impact of the failure modes (FM) of a protection strategy for High Voltage Direct Current (HVDC) grids.

702, 2019

Study of the impact of DC-DC converters on the protection strategy of HVDC grids

February 7th, 2019|Power Electronics & Converters, Publications|

This paper studies the role of DC-DC converters in the protection of HVDC grids acting as firewalls to stop the propagation of faults. The effects of blocking the converter or actively controlling its operation during faults are presented.The results demonstrate the capabilities of DC-DC converters beyond DC voltage transformation.

2510, 2018

Packaging of 10 kV SiC MOSFETs: Trade-Off Between Electrical and Thermal Performances

October 25th, 2018|Power Electronics & Converters, Publications|

SiC transistors can achieve blocking voltages of 10kV and more. This makes them especially attractive for energy transmission and distribution. Although SiC devices can in theory operate at high temperature (more than 200°C), the on-state resistance of SiC MOSFETs exhibits a strong dependency on the junction temperature. As a consequence, it is shown that these transistors must actually operate at a relatively low junction temperature (less than 100°C) to increase conversion efficiency and prevent thermal runaway. This requirement for high-performance cooling systems has consequences on the packaging technology: the corresponding power modules must both offer a high voltage insulation and a low thermal resistance. In particular, there is a trade-off in the thickness of the ceramic substrate located between the SiC devices and the cooling system. We propose a new substrate structure, with raised features, which improves the voltage strength of a substrate without increasing its thickness. This structure is demonstrated experimentally.

1810, 2018

Energy Control of Modular Multilevel Converters in MTDC Grids for Wind Power Integration

October 18th, 2018|Publications, Supergrid Architecture & Systems|

The role of Modular Multilevel Converters (MMCs) in HVDC grid greatly differs depending on whether it is an offshore or an onshore station. From the common point in their control schemes, an unexploited ability of the MMC—the controllability of the internally stored energy—is identified in both offshore and onshore applications. The virtual capacitor control, previously proposed by the authors, makes use of this degree of freedom to provide energy contribution to the DC grid. The impact of this control is demonstrated by time-domain simulations of a five-terminal HVDC grid.

1110, 2018

Design considerations for the 2- phase cooling system of a 5 MW MVDC converter

October 11th, 2018|Power Electronics & Converters, Publications|

This presentation will provide an update on our current project: designing a cooler for a high power (5 MW) MVDC converter for offshore wind turbines applications. A number of constraints are imposed, mainly related to a limited volume, environmental, safety and health regulations, and of course cooling performance. Indeed, as we presented last year (ATW 2017), the silicon carbide power semiconductors used in this converter should operate at a junction temperature lower than 100 °C for better efficiency.

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