Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor
Static, switching and short-circuit characterization of a 10 kV-class Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) is reported.
Static, switching and short-circuit characterization of a 10 kV-class Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) is reported.
A 100 kW, isolated dc–dc converter was built over the course of one year, starting from a blank page. This paper details the design and manufacturing process.
This paper analyzes the impact on the converter design of including such characteristic for the DC-DC Modular Multilevel Converter.
A novel model and a multi-variable linear control for power and magnetizing average currents are proposed
In this prototype, achieving full operation was prevented by false triggering of semiconductors due to large common-mode current through gate drivers.
Simulation results of a MMC model and figures of merit are shown to provide consistent result, proving that the proposed figures of merit are a very simple and fast way to select the best semiconductor switch.
This paper introduces a unidirectional MVDC-HVDC converter for ‘all DC’ connected offshore wind farms.
This paper investigates the gate-driver design challenges encountered due to the fast switching of wide band-gap semiconductors (here, SiC MOSFETs) in the half-bridge configuration.
The experimental studies show the effects of the transformer construction and vector group (star/delta) on the common-mode currents through the gate drivers of SiC MOSFETs in a 100kW 1.2kV three-phase dual active bridge converter.
This article presents the measurements of the equivalent B(H) and the equivalent magnetic permeability of two three-phase MFT prototypes.