In the new electrical grids, series/parallel converters architectures can be considered for medium and high voltage power conversion. Dual Active Bridge (DAB) topology is a serious candidate to be implemented within these converters.

In the new electrical grids, series/parallel converters architectures can be considered for medium and high voltage power conversion. Dual Active Bridge (DAB) topology is a serious candidate to be implemented within these converters.

In the future, medium-frequency transformers (with a frequency range of 5-100 kHz) will be major components in dc-dc converter applications, for both medium-voltage direct current and high-voltage direct current networks.

High Voltage Direct Current (HVDC) is increasingly being used for electric power transmission over long distances.

Gate-drive power supplies in medium voltage and high voltage direct current (MVDC / HVDC) applications require medium to high voltage insulation.

With the development of wide bandgap semiconductors, voltage ratings of 10kV and more become realistic. As a consequence, it is now mandatory to propose a suitable packaging. Ceramic-metal substrates are an established technology for voltages up to 3.3kV, but they exhibit some weaknesses for higher voltages.

The failure mode of press-pack-type packages dedicated to SiC devices is experimentally analyzed in order to investigate their use for HVDC applications. Single SiC Schottky diode samples have been submitted to short-circuit conditions and continuous current flow test.

The article describes a feedback Preisach hysteresis model equivalent circuit implementation of a medium frequency single-phase transformer being a part of a high power and high efficiency DC-DC converter.