In AC electric trains, power electronic traction transformers (PETT) are multilevel single phase AC/DC converters connected to the AC medium voltage overhead line. For indirect topologies, DC/DC isolated converters are key elements of PETTs. This paper shows a method to design such DC/DC converters, and several variants are considered. Finally, the comparison results, in the case of a 25 kV / 50 Hz power supply and 3.3 kV SiC MOSFETs, show that the variant with a resonant AC link, with only one controlled bridge and a switching frequency lower than the resonant frequency, offers the best efficiency at rated power for a given volume.

Fail-to-short packages, which can still carry current after the failure of their semiconductor devices, are required for HVDC applications. However, all existing solutions are dedicated to silicon components. Here, a fail-to-short package is proposed for SiC devices. Its manufacturing process is described. 4 modules are built and submitted to intense short circuit currents (up to 2000 A). It is found that they offer a stable short-circuit failure mode, providing that the modules are mechanically clamped to prevent separation during the surge current test.

This paper studies the role of DC-DC converters in the protection of HVDC grids acting as firewalls to stop the propagation of faults. The effects of blocking the converter or actively controlling its operation during faults are presented.The results demonstrate the capabilities of DC-DC converters beyond DC voltage transformation.

Why are ceramic materials (when compared to organic materials) necessary for the purpose of electric isolation in power modules, especially for medium voltage applications...

This paper presents a methodology for the modelling of a 25 kV-50 Hz railway infrastructure, for frequencies from 0 to 5 kHz. It aims to quantify the amplifications of current and voltage harmonics generated by on-board converters into the infrastructure. A circuit is developed to model the skin effect in the overhead line for time-domain simulations. A new approach, based on state space representation and transfer functions, is also proposed to analyse the interactions between trains.

During the design of power converter, design mistakes must be avoided, especially for high voltage and high power converters. Simulation tools can be used to help the designers and limit the risks. This presentation will present a design flow approach used to design and validate a 1.2 kV – 100 kW DC-DC converter which was design from die to converter levels and started for a “blank page”. The presentation is organized in four parts. Firstly, the context of the work is introduced. Then, the simulation flow approach used to validate the design is presented. For this part, the presentation will focus on the system level simulation of one inverter, including the power modules. This part will highlight the main limitations of the current simulation tools found by the designers. In the third part, an enhanced approach is proposed to overcome the limitations and the first results are presented Finally, a conclusion will be presented.

SiC transistors can achieve blocking voltages of 10kV and more. This makes them especially attractive for energy transmission and distribution. Although SiC devices can in theory operate at high temperature (more than 200°C), the on-state resistance of SiC MOSFETs exhibits a strong dependency on the junction temperature. As a consequence, it is shown that these transistors must actually operate at a relatively low junction temperature (less than 100°C) to increase conversion efficiency and prevent thermal runaway. This requirement for high-performance cooling systems has consequences on the packaging technology: the corresponding power modules must both offer a high voltage insulation and a low thermal resistance. In particular, there is a trade-off in the thickness of the ceramic substrate located between the SiC devices and the cooling system. We propose a new substrate structure, with raised features, which improves the voltage strength of a substrate without increasing its thickness. This structure is demonstrated experimentally.