SuperGrid Institute’s vision at the second conference on Power Transmission in Africa (Johannesburg)

2021-08-11T16:26:45+02:00February 10th, 2020|Conference, Evenement|

This morning, SuperGrid Institute presented at the second conference on Power Transmission in Africa (Johannesburg) its vision on new transmission technologies and architecture, shaping the future grids. With emphasis on the fantastic opportunity that the latest HVDC technologies and solutions represent for a robust and interconnected power system in Africa, able to address major issues linked to energy transition.

The EPE flag handover at EPE’19, Genova: SuperGrid Institute takes the reins for EPE 2020 ECCE Europe in Lyon, France

2021-08-11T17:37:33+02:00September 6th, 2019|Architecture & systèmes du supergrid, Conference, Electronique de puissance & convertisseurs|

At the closing session, Abdelkrim Benchaib, General Chairman of EPE’20, received the EPE flag, on stage, from Mario Marchesoni, General Chairman of EPE’19, in the presence of Leo Lorenz, President of the EPE association. During this conference, Abdelkrim Benchaib was also elected as a member of the executive committee of EPE ECCE Europe for 4 more years.

Michel MERMET-GUYENNET’s keynote speech at the 13th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2019)

2021-08-11T17:37:37+02:00July 12th, 2019|Conference, Electronique de puissance & convertisseurs|

This Tuesday the 10th of July, Michel MERMET-GUYENNET presented a keynote speech at the 13th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2019) in Toulouse, following the invitation of Bernado COGO from the Antoine de Saint Exupéry Institute of Technology (IRT Saint Exupéry). In his paper, Michel MERMET-GUYENNET presented power electronics technologies for MV and HV grids.

Measurement and Analysis of SiC-MOSFET threshold voltage shift

2021-08-11T17:37:46+02:00October 4th, 2018|Conference, Electronique de puissance & convertisseurs|

Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.

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