SuperGrid Institute’s poster session this week at ESREF 2018 :  

Measurement and Analysis of SiC-MOSFET
threshold voltage shift

Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper. Complementary testing was performed with HTGS test and gate oxide characterizations, such as the charge pumping technique. The results obtained are used to add insight to the current discussion of SiC MOSFET robustness. Measurement protocols implementation on 1.7 kV 45 mΩ are detailed, which will be useful for the next generation of SiC MOSFET.

This post was presented by Quentin Molin this week at ESREF2018 – 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis.

See the full poster here!