In this paper we present a new test bench called micro-OBIC used to characterized wide band gap semi-conductor. Micro-OBIC allows to scan an Optical Beam Induced Current (OBIC) signal with a microscopic spatial resolution. We used micro-OBIC to characterize peripheral protection such as MESA, JTE or JTE in high voltage SiC device.
Camille SONNEVILLE, Dominique PLANSON, Luong Viet PHUNG, Pascal BEVILACQUA, Besar ASLLANI
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