Fail-to-short packages, which can still carry current after the failure of their semiconductor devices, are required for HVDC applications. However, all existing solutions are dedicated to silicon components. Here, a fail-to-short package is proposed for SiC devices. Its manufacturing process is described. 4 modules are built and submitted to intense short circuit currents (up to 2000 A). It is found that they offer a stable short-circuit failure mode, providing that the modules are mechanically clamped to prevent separation during the surge current test.

Ilyas Dchar, Cyril Buttay, Hervé Morel